Introduction: The working principle of magnetron sputtering is that under the action of electric field E, electrons collide with argon atoms in the process of flying to the substrate, causing them to ionize to produce Ar positive ions and new electrons; the new electrons fly to the substrate, Ar ions accelerate to the cathode target under the action of an electric field, and bombard the target surface with high energy, causing the target to sputter. In sputtering particles, neutral target atoms or molecules are deposited on the substrate to form a thin film, and the secondary electrons generated will be affected by the electric and magnetic fields, resulting in a shift in the direction indicated by E (electric field) × B (magnetic field), referred to as E×B drifts, and its trajectory is similar to a cycloid of magnetron sputtering. If it is a toroidal magnetic field, the electrons will move in a circular motion on the target surface in an approximate cycloid form. Their path of motion is not only very long, but also confined in the plasma region close to the target surface, and a large amount of ionization in this region Ar is used to bombard the target material to achieve a high deposition rate. With the increase in the number of collisions, the energy consumption of the secondary electrons is exhausted, gradually moving away from the target surface, and finally deposited on the substrate under the action of the electric field E. Since the energy of the electron is very low, the energy transferred to the substrate is very small, resulting in a low temperature rise of the substrate. Magnetron sputtering is the collision process between incident particles and target. The incident particles undergo a complex scattering process in the target, collide with the target atom, and transfer part of the momentum to the target atom, which in turn collides with other target atoms to form a cascade process. In this cascade process, target atoms near certain surfaces gain enough momentum to move outwards and leave the target to be sputtered. use: 1. Electron beam sensitive samples Mainly include biological samples, plastic samples, etc. The electron beam in S EM has high energy. During the interaction with the sample, it transfers part of the energy to the sample in the form of heat. If the sample is a material sensitive to electron beams, this interaction will destroy part or even the entire sample structure. In this case, a surface coating made of a non-electron beam sensitive material can act as a protective layer to prevent such damage; 2. Non-conductive samples Since the sample does not conduct electricity, its surface has "electron traps". This accumulation of electrons on the surface is called "charging". In order to eliminate the charging effect, a metal conductive layer can be plated on the surface of the sample. The coating acts as a conductive channel to transfer the charged electrons from the surface of the material to eliminate the charging effect. In scanning electron microscopy imaging, sputtering materials increase the signal-to-noise ratio, thereby obtaining better imaging quality. 3. New materials Fabrication of experimental electrodes of non-conductive materials to observe conductive characteristics Technical Parameters: Supporting pumps: turbo molecular pump (pumping speed 80L/S), two-liter Feiyue vacuum pump Sputtering target: The standard target is a gold target with a thickness of 60mm*0.1mm. It can also be equipped with silver target and platinum target according to the actual situation. Sputtering current: current 0-500A Ultimate vacuum: 5*10PA Sample bin size: diameter 180mm, height 200mm Sample table size: sample table size 80mm in diameter Working voltage 220V (110V can be used), 50HZ
Introduction: The working principle of magnetron sputtering is that under the action of electric field E, electrons collide with argon atoms in the process of flying to the substrate, causing them to ionize to produce Ar positive ions and new electrons; the new electrons fly to the substrate, Ar ions accelerate to the cathode target under the action of an electric field, and bombard the target surface with high energy, causing the target to sputter. In sputtering particles, neutral target atoms or molecules are deposited on the substrate to form a thin film, and the secondary electrons generated will be affected by the electric and magnetic fields, resulting in a shift in the direction indicated by E (electric field) × B (magnetic field), referred to as E×B drifts, and its trajectory is similar to a cycloid of magnetron sputtering. If it is a toroidal magnetic field, the electrons will move in a circular motion on the target surface in an approximate cycloid form. Their path of motion is not only very long, but also confined in the plasma region close to the target surface, and a large amount of ionization in this region Ar is used to bombard the target material to achieve a high deposition rate. With the increase in the number of collisions, the energy consumption of the secondary electrons is exhausted, gradually moving away from the target surface, and finally deposited on the substrate under the action of the electric field E. Since the energy of the electron is very low, the energy transferred to the substrate is very small, resulting in a low temperature rise of the substrate. Magnetron sputtering is the collision process between incident particles and target. The incident particles undergo a complex scattering process in the target, collide with the target atom, and transfer part of the momentum to the target atom, which in turn collides with other target atoms to form a cascade process. In this cascade process, target atoms near certain surfaces gain enough momentum to move outwards and leave the target to be sputtered.
