RIE200 reactive ion etching machine Introduction: The RIE200 reactive ion etching machine adopts the RIE reactive ion induced excitation method to achieve microstructure etching of material surface anisotropy. Especially suitable for conducting research on dielectric etching, silicon etching, metal etching, etc. in universities, research institutes, microelectronics, semiconductor enterprise laboratories. Low usage cost, high cost-effectiveness, easy maintenance, fast and efficient processing. Suitable for RIE reactive ion etching on all substrates and complex geometric configurations. Mainly used in the research and manufacturing of devices in the fields of microelectronics chips, solar cells, biochips, displays, optics, communication, etc. Features: 1. 7-inch color touch screen with interactive operation interface in both Chinese and English, automatic control and monitoring of process parameter status, 20 formula programs, and process data that can be stored and traced. 2. The PLC industrial computer controls the entire cleaning process, with two working modes: manual and automatic. 3. The vacuum chamber and full vacuum pipeline system are made of 316 stainless steel material, which is corrosion-resistant and pollution-free. 4. Adopting anti-corrosion digital flow meters to achieve precise control of gas input. Standard dual gas delivery system, optional multi gas delivery system, can input gases such as oxygen, argon, nitrogen, carbon tetrafluoride, hydrogen or mixed gas. 5. Adopting a shower style porous intake method to address the issue of uneven single hole intake. 6. HEPA efficient filtration, gas backfilling and blowing to prevent secondary pollution. 7. Designed with a 60 degree tilt angle interface that conforms to ergonomics, it is easy to operate and user-friendly. 8. Adopting a top mounted vacuum chamber, with an upper cover design and a downward pressure hinge switch mode. 9. Upward 360 degree horizontal sample collection and placement design, in line with ergonomics, making operation more convenient. 10. It has a large effective processing area and can handle silicon wafers with a maximum diameter of 154mm. 11. Safety protection, cabin door open, automatic power off, machine running and stopping prompt. Technical parameters: Model: RIE200 Internal dimensions of the cabin: H38x Φ 260mm Cabin volume: 2L RF power supply: 40KHz Electrode: Stainless steel gas bath RIE electrode, Φ 200mm Matcher: automatic matching Etching method: RIE RF power: 0-600W adjustable (optional 0-1000W) Gas control: Mass flow meter (MFC) (standard dual channel, optional multiple channels) Flow range 0-500SCCM (adjustable) Process gases: Ar, N ₂, O ₂, H ₂, CF4, CF4+H2, CHF3 or other mixed gases (optional) Maximum processing size: Φ 154mm Product size: L520xW600xH420mm Packaging size: L700xW580xH490mm Time setting: 9999 seconds Vacuum pump: pumping speed of about 8m ³/ H Gas stabilization time: 1 minute Extreme vacuum:=1Pa Power supply: AC220V 50-60Hz, 802 (1202) 502 (802) W, all wiring complies with the Low Voltage Distribution Design Specification According to relevant national standards such as GB50054-95 and Code for Design of Low Voltage Distribution Equipment and Lines. Overall weight: 38kg
Introduction: The RIE200 reactive ion etching machine adopts the RIE reactive ion induced excitation method to achieve microstructure etching of material surface anisotropy. Especially suitable for conducting research on dielectric etching, silicon etching, metal etching, etc. in universities, research institutes, microelectronics, semiconductor enterprise laboratories. Low usage cost, high cost-effectiveness, easy maintenance, fast and efficient processing. Suitable for RIE reactive ion etching on all substrates and complex geometric configurations. Mainly used in the research and manufacturing of devices in the fields of microelectronics chips, solar cells, biochips, displays, optics, communication, etc.
