BEST-351 High Temperature Four Probe Resistivity Tester
Introduction: The four-probe dual-electric combined measurement method is used to test the square resistance and resistivity. The system is combined with a high-temperature box, and the high-temperature four-probe test probe fixture and PC software are used to process and measure the data to solve the temperature change of the conductivity of the semiconductor material. According to the measurement requirements, the software draws the change curve map of temperature and resistance, resistivity, conductivity data in real time, and the report analysis of process data values. BEST-351 high temperature four-probe resistivity tester is used for: enterprises, colleges and universities, The scientific research department is responsible for the resistivity of conductive ceramics, silicon and germanium single crystals (rods, wafers), measuring the sheet resistance of silicon epitaxial layers, diffusion layers and ion implantation layers, and measuring the sheet resistance of new materials such as conductive glass (ITO) and other conductive films. , resistivity and conductivity data. The double-electrical four-probe instrument uses a straight-line four-probe for double-position measurement. The design refers to the physical test method of single crystal silicon and refers to the American A.S.T.M standard. Technical parameter: Specifications: FT-351A FT-351B FT-351C Sheet resistance range: 10-5～2×105Ω 10-6～2×105Ω 10-4～1×107Ω Resistivity range: 10-6～2×106Ω-cm 10-7～2×106Ω-cm 10-5～2×108Ω-cm Test current range: 0.1μA.μA.0μA, 100μA, 1mA, 10mA, 100 mA 1A, 100mA, 10mA, 1mA, 100uA, 10uA, 1uA, 0.1uA 10mA?---200pA Current Accuracy: ±0.1% of reading ±0.1 of reading ±2% Resistance accuracy: ≤0.3% ≤0.3% ≤10% PC software interface display: resistance, resistivity, square resistance, temperature, unit conversion, temperature coefficient, current, voltage, probe shape, probe spacing, thickness, conductivity Test method: double electricity measurement Four-probe working power supply: AC 220V±10%.50Hz <30W Error: ≤3% (standard sample result ≤15% Temperature (optional): normal temperature --400°C; 600°C; 800°C; 1000°C; 1200°C; 1400°C; 1600°C Atmosphere protection: (Gases provided by customers) Commonly used gases are as follows: Helium (He), Neon (Ne), Argon (Ar), Krypton (Kr), Xenon (Xe), Radon (Rn), all of which are colorless and odorless , gaseous monatomic molecules Temperature accuracy: Punch temperature value: ≤1-3°C; temperature control accuracy: ±1°C Heating rate: 400℃--800℃ need 15 minutes from normal temperature; 30 minutes at 800℃-1200℃; 250 minutes-300 minutes at 1400℃-1600℃ High temperature material: The composite ceramic fiber material is used, which has the characteristics of vacuum forming and high temperature without powder falling. PC software: A set of test PC software, USB communication interface, software interface synchronously display, analyze, save and print data! Electrode material: tungsten electrode or molybdenum electrode Probe spacing: linear probe, probe center spacing: 4mm; the sample is required to be larger than 13mm in diameter Standard outside (optional): 1 set of computer and printer; 2. 1-5 standard resistors Power supply: 400-1200°C power supply 220V, power 4KW; 380V; 1400°C-1600°C power supply 380V; power 9KW:
Introduction: The four-probe dual-electric combined measurement method is used to test the square resistance and resistivity. The system is combined with a high-temperature box, and the high-temperature four-probe test probe fixture and PC software are used to process and measure the data to solve the temperature change of the conductivity of the semiconductor material. According to the measurement requirements, the software draws the change curve map of temperature and resistance, resistivity, conductivity data in real time, and the report analysis of process data values. BEST-351 high temperature four-probe resistivity tester is used for: enterprises, colleges and universities, The scientific research department is responsible for the resistivity of conductive ceramics, silicon and germanium single crystals (rods, wafers), measuring the sheet resistance of silicon epitaxial layers, diffusion layers and ion implantation layers, and measuring the sheet resistance of new materials such as conductive glass (ITO) and other conductive films. , resistivity and conductivity data. The double-electrical four-probe instrument uses a straight-line four-probe for double-position measurement. The design refers to the physical test method of single crystal silicon and refers to the American A.S.T.M standard.
